Infineon HEXFET N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-247AC IRFP048NPBF
- RS-stocknr.:
- 919-4864
- Fabrikantnummer:
- IRFP048NPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 25 eenheden)*
€ 38,025
(excl. BTW)
€ 46,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 25 - 100 | € 1,521 | € 38,03 |
| 125 - 475 | € 1,227 | € 30,68 |
| 500 - 1225 | € 1,067 | € 26,68 |
| 1250 + | € 0,88 | € 22,00 |
*prijsindicatie
- RS-stocknr.:
- 919-4864
- Fabrikantnummer:
- IRFP048NPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 64 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 16 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 89 nC @ 10 V | |
| Width | 5.3mm | |
| Transistor Material | Si | |
| Length | 15.9mm | |
| Height | 20.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 64 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 16 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 89 nC @ 10 V | ||
Width 5.3mm | ||
Transistor Material Si | ||
Length 15.9mm | ||
Height 20.3mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- MX
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