Vishay Si1308EDL Type N-Channel Power MOSFET, 1.5 A, 30 V Enhancement, 3-Pin SOT-323 Si1308EDL-T1-GE3
- RS-stocknr.:
- 787-9121
- Fabrikantnummer:
- Si1308EDL-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 8,075
(excl. BTW)
€ 9,775
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Plus verzending 25 stuk(s) vanaf 29 december 2025
- Plus verzending 400 stuk(s) vanaf 29 december 2025
- Laatste verzending 12.125 stuk(s) vanaf 05 januari 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,323 | € 8,08 |
| 250 - 600 | € 0,242 | € 6,05 |
| 625 - 1225 | € 0,21 | € 5,25 |
| 1250 - 2475 | € 0,178 | € 4,45 |
| 2500 + | € 0,152 | € 3,80 |
*prijsindicatie
- RS-stocknr.:
- 787-9121
- Fabrikantnummer:
- Si1308EDL-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si1308EDL | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.185Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.2mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Width | 1.35 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si1308EDL | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.185Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.2mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Width 1.35 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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