Vishay SQ Rugged Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS462EN-T1_GE3
- RS-stocknr.:
- 787-9525
- Fabrikantnummer:
- SQS462EN-T1_GE3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,98
(excl. BTW)
€ 8,445
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- 5.950 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 1,396 | € 6,98 |
*prijsindicatie
- RS-stocknr.:
- 787-9525
- Fabrikantnummer:
- SQS462EN-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 135mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Length | 3.4mm | |
| Height | 1.12mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 135mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Length 3.4mm | ||
Height 1.12mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
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