STMicroelectronics STripFET H7 Type N-Channel MOSFET, 45 A, 100 V Enhancement, 3-Pin TO-252 STD45N10F7
- RS-stocknr.:
- 791-9291
- Fabrikantnummer:
- STD45N10F7
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,00
(excl. BTW)
€ 10,90
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,80 | € 9,00 |
| 25 - 45 | € 1,704 | € 8,52 |
| 50 - 120 | € 1,54 | € 7,70 |
| 125 - 245 | € 1,384 | € 6,92 |
| 250 + | € 1,316 | € 6,58 |
*prijsindicatie
- RS-stocknr.:
- 791-9291
- Fabrikantnummer:
- STD45N10F7
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STripFET H7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 60W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STripFET H7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 60W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Automotive Standard No | ||
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Gerelateerde Links
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 STD100N10F7
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 STD25N10F7
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 STF100N10F7
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerFLAT