IXYS Single HiperFET, Q3-Class 1 Type N, Type N-Channel MOSFET, 15 A, 1000 V Enhancement, 3-Pin TO-247 IXFH15N100Q3

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RS-stocknr.:
801-1389
Artikelnummer Distrelec:
302-53-309
Fabrikantnummer:
IXFH15N100Q3
Fabrikant:
IXYS
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Merk

IXYS

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

1000V

Package Type

TO-247

Series

HiperFET, Q3-Class

Mount Type

Through Hole, Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.05Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

64nC

Maximum Power Dissipation Pd

690W

Forward Voltage Vf

1.4V

Minimum Operating Temperature

-55°C

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Width

5.3 mm

Height

16.26mm

Standards/Approvals

No

Length

16.26mm

Number of Elements per Chip

1

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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