IXYS Type N-Channel MOSFET, 70 A, 200 V Enhancement, 3-Pin TO-247

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Subtotaal (1 tube van 30 eenheden)*

€ 376,32

(excl. BTW)

€ 455,34

(incl. BTW)

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  • Plus verzending 330 stuk(s) vanaf 29 december 2025
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Aantal stuks
Per stuk
Per tube*
30 +€ 12,544€ 376,32

*prijsindicatie

RS-stocknr.:
168-4699
Fabrikantnummer:
IXFH70N20Q3
Fabrikant:
IXYS
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Merk

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

67nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

690W

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Height

16.26mm

Standards/Approvals

No

Width

5.3 mm

Length

16.26mm

Automotive Standard

No

Land van herkomst:
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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