IXYS HiperFET, Polar3 N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

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RS-stocknr.:
802-4492
Fabrikantnummer:
IXFX120N30P3
Fabrikant:
IXYS
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Merk

IXYS

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar3

Package Type

PLUS247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

27 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.13 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

150 nC @ 10 V

Width

5.21mm

Length

16.13mm

Number of Elements per Chip

1

Height

21.34mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series


A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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