onsemi 2N7002K Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002K
- RS-stocknr.:
- 805-1126
- Fabrikantnummer:
- 2N7002K
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 100 eenheden)*
€ 8,30
(excl. BTW)
€ 10,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.700 stuk(s) vanaf 05 januari 2026
- Plus verzending 21.000 stuk(s) vanaf 12 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 400 | € 0,083 | € 8,30 |
| 500 - 900 | € 0,071 | € 7,10 |
| 1000 + | € 0,062 | € 6,20 |
*prijsindicatie
- RS-stocknr.:
- 805-1126
- Fabrikantnummer:
- 2N7002K
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Height | 1.2mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 350mW | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Height 1.2mm | ||
Automotive Standard AEC-Q101 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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