onsemi 2N7002KW Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23
- RS-stocknr.:
- 166-2856
- Fabrikantnummer:
- 2N7002KW
- Fabrikant:
- onsemi
Subtotaal (1 rol van 3000 eenheden)*
€ 210,00
(excl. BTW)
€ 240,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 08 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,07 | € 210,00 |
*prijsindicatie
- RS-stocknr.:
- 166-2856
- Fabrikantnummer:
- 2N7002KW
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002KW | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 0.55nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Width | 1.3 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002KW | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 350mW | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 0.55nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Width 1.3 mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-323 2N7002KW
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-323 2N7002WT1G
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-323 DMN601WK-7
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002K
- onsemi Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 NTJD5121NT1G
- Infineon N-Channel MOSFET 60 V PG-SOT-323 SN7002WH6327XTSA1
- onsemi N-Channel MOSFET 50 V, 3-Pin SOT-323 BSS138W
- Infineon N-Channel MOSFET 60 V, 3-Pin SOT-323 BSS138WH6327XTSA1
