Fairchild QFET N-Channel MOSFET, 8 A, 1000 V, 3-Pin TO-247 FQH8N100C

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RS-stocknr.:
807-5857
Fabrikantnummer:
FQH8N100C
Fabrikant:
Fairchild Semiconductor
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Merk

Fairchild Semiconductor

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

1000 V

Series

QFET

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.45 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

225 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

53 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

4.82mm

Height

20.82mm

Minimum Operating Temperature

-55 °C

Land van herkomst:
MY

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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