onsemi UltraFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220 HUF75344P3
- RS-stocknr.:
- 807-6689
- Fabrikantnummer:
- HUF75344P3
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 5 eenheden)*
€ 17,42
(excl. BTW)
€ 21,08
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 20 stuk(s) vanaf 29 december 2025
- Plus verzending 35 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 3,484 | € 17,42 |
*prijsindicatie
- RS-stocknr.:
- 807-6689
- Fabrikantnummer:
- HUF75344P3
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | UltraFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.25V | |
| Maximum Power Dissipation Pd | 285W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 175nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 16.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series UltraFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.25V | ||
Maximum Power Dissipation Pd 285W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 175nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.7 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 16.3mm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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