Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	28 A
	Maximum Drain Source Voltage	500 V
	Series	UniFET
	Package Type	TO-3PN
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	175 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	310 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	5mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	80 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Length	15.8mm
	Height	20.1mm
	Minimum Operating Temperature	-55 °C

	Alles selecteren
	Merk onsemi
	Channel Type N
	Maximum Continuous Drain Current 28 A
	Maximum Drain Source Voltage 500 V
	Series UniFET
	Package Type TO-3PN
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 175 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 310 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 5mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 80 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Length 15.8mm
	Height 20.1mm
	Minimum Operating Temperature -55 °C

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi UniFET N-Channel MOSFET, 28 A, 500 V, 3-Pin TO-3PN FDA28N50F

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

Gerelateerde Links