Vishay SiB406EDK Type N-Channel MOSFET, 5.1 A, 20 V Enhancement, 6-Pin SC-75 SIB406EDK-T1-GE3
- RS-stocknr.:
- 814-1247
- Fabrikantnummer:
- SIB406EDK-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 8,66
(excl. BTW)
€ 10,48
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,433 | € 8,66 |
| 200 - 480 | € 0,333 | € 6,66 |
| 500 - 980 | € 0,303 | € 6,06 |
| 1000 - 1980 | € 0,26 | € 5,20 |
| 2000 + | € 0,234 | € 4,68 |
*prijsindicatie
- RS-stocknr.:
- 814-1247
- Fabrikantnummer:
- SIB406EDK-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | SiB406EDK | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 10W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Width | 1.7 mm | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series SiB406EDK | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 10W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Width 1.7 mm | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Gerelateerde Links
- Vishay N-Channel MOSFET 20 V, 6-Pin SC-75 SIB406EDK-T1-GE3
- Vishay N-Channel MOSFET 6 V PowerPAK SC-75 SIB4316EDK-T1-GE3
- Vishay N-Channel MOSFET 190 V PowerPAK SC-75 SIB452DK-T1-GE3
- Vishay N-Channel MOSFET 20 V, 3-Pin SC-75 SI1012CR-T1-GE3
- Vishay N-Channel MOSFET 20 V, 3-Pin SC-75 SI1032R-T1-GE3
- Vishay P-Channel MOSFET 30 V PowerPAK SC-75 SIB4317EDK-T1-GE3
- Vishay N-Channel MOSFET 20 V SC-89 SI1062X-T1-GE3
- Vishay N-Channel MOSFET 60 V SC-70 SI1926DL-T1-GE3
