Vishay IRFL210 Type N-Channel Power MOSFET, 960 mA, 200 V Enhancement, 4-Pin SOT-223 IRFL210TRPBF

RS-stocknr.:: 815-2736
Fabrikantnummer:: IRFL210TRPBF
Fabrikant:: Vishay

Vishay IRFL210 Type N-Channel Power MOSFET, 960 mA, 200 V Enhancement, 4-Pin SOT-223 IRFL210TRPBF

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10 - 90	€ 0,787	€ 7,87
100 - 240	€ 0,63	€ 6,30
250 - 490	€ 0,552	€ 5,52
500 - 990	€ 0,511	€ 5,11
1000 +	€ 0,462	€ 4,62

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RS-stocknr.:: 815-2736
Fabrikantnummer:: IRFL210TRPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	960mA
	Maximum Drain Source Voltage Vds	200V
	Series	IRFL210
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	8.2nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	3.1W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	1.8mm
	Length	6.7mm
	Width	3.7mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 960mA
	Maximum Drain Source Voltage Vds 200V
	Series IRFL210
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 8.2nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 3.1W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 1.8mm
	Length 6.7mm
	Width 3.7mm
	Automotive Standard No

Vishay IRFL210 Series Power MOSFET, 200V Maximum Drain Source Voltage, 960mA Maximum Continuous Drain Current - IRFL210TRPBF

This power MOSFET is a surface-mount N-channel enhancement device designed for switching and amplification in electronic control and power-conversion circuits. It offers high-voltage capability and a gate-drive range suitable for low-voltage control, making it appropriate for applications requiring Compact SOT-223 packaging and moderate continuous drain performance.

Features and Benefits:

• 200V Vds enabling high-voltage switching capability
• 1.5Ω Rds providing predictable on-resistance for load control
• 960mA continuous drain current supporting moderate loads
• 8.2nC typical gate charge enabling low-drive energy requirements
• 20V maximum gate-source voltage allowing standard gate-drive margins
• 3.1W power dissipation for thermal planning in constrained assemblies

Applications

• Suitable for mid-voltage power supplies and converters
• Ideal for motor drive control in small automation systems
• Used for switch-mode regulation in instrumentation
• Can be used for load switching in control panels

What operating temperature range can I expect for reliability?

The device operates from -55°C up to a maximum junction temperature of 150°C, which informs thermal design and derating for sustained use.

How should I account for package-related thermal limits?

Maximum power dissipation is 3.1W

thermal management must consider PCB copper area and ambient conditions to avoid exceeding this limit.

What gate-drive constraints must be observed?

Gate voltage must not exceed 20V to prevent gate-oxide stress, and the typical gate charge of 8.2nC determines the required drive current for switching speeds.

What mechanical footprint considerations are there for assembly?

The component is supplied in an SOT-223 package with a pin count of 4, which affects solder-pad layout and reflow profiles.

Are there restrictions on continuous current capability?

Continuous drain current is specified at 960mA, so designs should include margin for inrush and transient conditions.