Vishay IRFR Type N-Channel MOSFET, 7.7 A, 60 V Enhancement, 3-Pin TO-252 IRFR014TRPBF
- RS-stocknr.:
- 815-2761
- Fabrikantnummer:
- IRFR014TRPBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 8,54
(excl. BTW)
€ 10,33
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 1.250 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,854 | € 8,54 |
| 100 - 240 | € 0,805 | € 8,05 |
| 250 - 490 | € 0,727 | € 7,27 |
| 500 - 990 | € 0,684 | € 6,84 |
| 1000 + | € 0,642 | € 6,42 |
*prijsindicatie
- RS-stocknr.:
- 815-2761
- Fabrikantnummer:
- IRFR014TRPBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | IRFR | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Height | 2.38mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series IRFR | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Height 2.38mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Gerelateerde Links
- Vishay IRFR Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay IRLR Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay IRLR Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IRLR014TRPBF
- Vishay Single 1 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IRFR014PBF
- Vishay IRFR Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay IRFR Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IRFR9014TRPBF
- Vishay IRFR Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Vishay IRFR Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252