Vishay TrenchFET Type N-Channel MOSFET, 60 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SiRA10BDP-T1-GE3
- RS-stocknr.:
- 735-112
- Fabrikantnummer:
- SiRA10BDP-T1-GE3
- Fabrikant:
- Vishay
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€ 1,10
(excl. BTW)
€ 1,33
(incl. BTW)
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- Verzending vanaf 03 september 2026
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Rol(len) | Per rol |
|---|---|
| 1 + | € 1,10 |
*prijsindicatie
- RS-stocknr.:
- 735-112
- Fabrikantnummer:
- SiRA10BDP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.005Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 43W | |
| Typical Gate Charge Qg @ Vgs | 24.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 5.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.005Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 43W | ||
Typical Gate Charge Qg @ Vgs 24.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Height 1.1mm | ||
Standards/Approvals RoHS Compliant | ||
Width 5.3mm | ||
Automotive Standard No | ||
- Land van herkomst:
- TW
The Vishay N channel MOSFET is designed for efficient and reliable power switching in high-performance power electronics. it is fully Rg and UIS tested to ensure robustness under electrical stress and demanding operating conditions. optimized for low losses and fast switching, it supports Compact high power density designs while meeting RoHS compliant and halogen free requirements.
Offers 100 percent Rg and UIS testing for proven device reliability
Supports high power density dc/dc converter applications
Enables efficient synchronous rectification performance
Complies with RoHS standards and halogen free requirements
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