Vishay SQ Rugged Type P-Channel MOSFET, 3 A, 12 V Enhancement, 3-Pin SOT-23 SQ2315ES-T1_GE3
- RS-stocknr.:
- 819-3901
- Fabrikantnummer:
- SQ2315ES-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 6,88
(excl. BTW)
€ 8,32
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 980 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,344 | € 6,88 |
| 200 - 480 | € 0,275 | € 5,50 |
| 500 - 980 | € 0,223 | € 4,46 |
| 1000 - 1980 | € 0,172 | € 3,44 |
| 2000 + | € 0,154 | € 3,08 |
*prijsindicatie
- RS-stocknr.:
- 819-3901
- Fabrikantnummer:
- SQ2315ES-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | SQ Rugged | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 92mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series SQ Rugged | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 92mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Maximum Operating Temperature 175°C | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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