Vishay SQ Rugged Type P-Channel MOSFET, 17 A, 40 V Enhancement, 8-Pin SOIC SQ4401EY-T1_GE3
- RS-stocknr.:
- 819-3917
- Fabrikantnummer:
- SQ4401EY-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 23,73
(excl. BTW)
€ 28,71
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- 10 stuk(s) klaar voor verzending vanaf een andere locatie
- Laatste verzending 20 stuk(s) vanaf 08 januari 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 2,373 | € 23,73 |
| 50 - 90 | € 1,898 | € 18,98 |
| 100 - 240 | € 1,661 | € 16,61 |
| 250 - 490 | € 1,541 | € 15,41 |
| 500 + | € 1,28 | € 12,80 |
*prijsindicatie
- RS-stocknr.:
- 819-3917
- Fabrikantnummer:
- SQ4401EY-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 7.14W | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.55mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 7.14W | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 1.55mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Gerelateerde Links
- Vishay SQ Rugged P-Channel MOSFET 40 V, 8-Pin SOIC SQ4401EY-T1-GE3
- Vishay SQ Rugged P-Channel MOSFET 30 V, 8-Pin SOIC SQ4431EY-T1_GE3
- Vishay SQ Rugged P-Channel MOSFET 40 V, 6-Pin TSOP-6 SQ3419EV-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 60 V, 8-Pin SOIC SQ4850EY-T1_GE3
- Vishay SQ Rugged P-Channel MOSFET 12 V, 3-Pin SOT-23 SQ2315ES-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJ412EP-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 20 V, 6-Pin TSOP-6 SQ3460EV-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SQS462EN-T1_GE3
