DiodesZetex DMN2050L Type N-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 DMN2050L-7
- RS-stocknr.:
- 822-2554
- Fabrikantnummer:
- DMN2050L-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 11,05
(excl. BTW)
€ 13,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 5.200 stuk(s) vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 550 | € 0,221 | € 11,05 |
| 600 - 1450 | € 0,146 | € 7,30 |
| 1500 + | € 0,113 | € 5,65 |
*prijsindicatie
- RS-stocknr.:
- 822-2554
- Fabrikantnummer:
- DMN2050L-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMN2050L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMN2050L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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