Infineon CoolMOS C3 Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220FP SPA08N80C3XKSA1

RS-stocknr.:: 823-5645
Fabrikantnummer:: SPA08N80C3XKSA1
Fabrikant:: Infineon

Infineon CoolMOS C3 Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220FP SPA08N80C3XKSA1

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Subtotaal (1 verpakking van 2 eenheden)*

€ 5,05

(excl. BTW)

€ 6,11

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 4 stuk(s), klaar voor verzending

Aantal stuks	Per stuk	Per verpakking*
2 - 18	€ 2,525	€ 5,05
20 - 48	€ 2,27	€ 4,54
50 - 98	€ 2,12	€ 4,24
100 - 198	€ 1,995	€ 3,99
200 +	€ 1,84	€ 3,68

*prijsindicatie

RS-stocknr.:: 823-5645
Fabrikantnummer:: SPA08N80C3XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-220FP
	Series	CoolMOS C3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	40W
	Typical Gate Charge Qg @ Vgs	45nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	4.85 mm
	Height	16.15mm
	Length	10.65mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-220FP
	Series CoolMOS C3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 40W
	Typical Gate Charge Qg @ Vgs 45nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 4.85 mm
	Height 16.15mm
	Length 10.65mm
	Automotive Standard No

Infineon CoolMOS™ C3 Series MOSFET, 8A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - SPA08N80C3XKSA1

This power transistor is designed for high voltage applications, focusing on efficiency and thermal management. It serves as a vital component in contemporary industrial applications.

Features & Benefits

• Maximum continuous drain current of 8A

• Withstands drain-source voltages up to 800V

• Low on-state resistance enhances efficiency

• Ultra-low gate charge facilitates faster operation

• Robust performance across a wide temperature range

• Fully isolated packaging for enhanced safety

Applications

• Utilised in industrial equipment requiring high DC bulk voltages

• Suitable for active clamp forward switching

• Applicable in power conversion systems

• Employed in automation processes and electrical control systems

What is the operating temperature range for use?

The product operates effectively from -55°C to +150°C, providing stability across diverse environments.

How can the thermal performance be maintained during operation?

Adequate heat dissipation is crucial; the junction-case thermal resistance is measured at 3.8 K/W.

Can this be used in repetitive avalanche conditions?

Yes, it is rated for repetitive avalanche conditions, with specified energy limits outlined in the product specifications.

What is the significance of having ultra-low effective capacitances?

Ultra-low effective capacitances enhance switching performance and minimise energy losses during transitions.

How should I install this product in my circuit?

Utilise through-hole mounting in a TO-220 package, ensuring appropriate torque on the mounting screws to avoid damage.