Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF

RS-stocknr.:: 826-8901
Fabrikantnummer:: IRF7342TRPBF
Fabrikant:: Infineon

Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF

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€ 11,63

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€ 14,07

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Plus verzending 310 stuk(s) vanaf 02 november 2026
Plus verzending 320 stuk(s) vanaf 09 november 2026

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Aantal stuks	Per stuk	Per verpakking*
10 - 90	€ 1,163	€ 11,63
100 - 240	€ 0,907	€ 9,07
250 - 490	€ 0,85	€ 8,50
500 - 990	€ 0,791	€ 7,91
1000 +	€ 0,733	€ 7,33

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RS-stocknr.:: 826-8901
Fabrikantnummer:: IRF7342TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	3.4A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	26nC
	Maximum Power Dissipation Pd	2W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Length	5mm
	Height	1.5mm
	Standards/Approvals	No
	Width	4mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 3.4A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 26nC
	Maximum Power Dissipation Pd 2W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Length 5mm
	Height 1.5mm
	Standards/Approvals No
	Width 4mm
	Number of Elements per Chip 2
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF

This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.

Features & Benefits

• Maximum continuous drain current of 3.4A

• Drain-source voltage tolerance of up to 55V

• Surface mount design allows for straightforward installations

• Low maximum drain-source resistance improves energy efficiency

• Gate threshold voltage of 1 V promotes dependable switching

Applications

• Power management circuits for improved energy utilisation

• Automation equipment requiring robust switching capabilities

• Suitable for motor control systems

• Used in power converters for electronics

• Common in battery management systems

What are the thermal limits for operation?

It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does this component enhance circuit efficiency?

The low Rds(on) Value reduces power loss during operation, thereby enhancing overall circuit efficiency.

Can this MOSFET handle pulsed currents?

Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.

What type of packaging is it available in?

It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.

Is there a specific gate voltage for optimal performance?

The gate-to-source voltage should ideally be maintained at ±20V for optimal performance and longevity of the device.