Infineon OptiMOS™ 2 N-Channel MOSFET, 3.8 A, 20 V, 3-Pin SOT-346 BSR202NL6327HTSA1
- RS-stocknr.:
- 826-9386
- Fabrikantnummer:
- BSR202NL6327HTSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 100 eenheden)*
€ 16,70
(excl. BTW)
€ 20,20
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 + | € 0,167 | € 16,70 |
*prijsindicatie
- RS-stocknr.:
- 826-9386
- Fabrikantnummer:
- BSR202NL6327HTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.8 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | OptiMOS™ 2 | |
| Package Type | SOT-346 (SC-59) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 33 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Transistor Material | Si | |
| Width | 1.6mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 5.8 nC @ 4.5 V | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.8 A | ||
Maximum Drain Source Voltage 20 V | ||
Series OptiMOS™ 2 | ||
Package Type SOT-346 (SC-59) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Width 1.6mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 5.8 nC @ 4.5 V | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
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