Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88
- RS-stocknr.:
- 827-0115
- Fabrikantnummer:
- BSD235NH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 250 eenheden)*
€ 40,50
(excl. BTW)
€ 49,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 8.250 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 250 + | € 0,162 | € 40,50 |
*prijsindicatie
- RS-stocknr.:
- 827-0115
- Fabrikantnummer:
- BSD235NH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 0.32nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Length | 2mm | |
| Width | 1.25 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 0.32nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Length 2mm | ||
Width 1.25 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon OptiMOS™ 2 Dual N-Channel MOSFET 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1
- Infineon OptiMOS™ Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 2N7002DWH6327XTSA1
- Infineon Dual N/P-Channel-Channel MOSFET 20 V, 6-Pin SOT-363 BSD235CH6327XTSA1
- Infineon OptiMOS™ 2 N-Channel MOSFET 20 V, 6-Pin SOT-363 BSD214SNH6327XTSA1
- onsemi PowerTrench N-Channel MOSFET 25 V, 6-Pin SOT-363 (SC-70) FDG313N
- onsemi Dual N/P-Channel MOSFET 700 mA 6-Pin SOT-363 FDG6332C
- Infineon OptiMOS™ N-Channel MOSFET 100 V, 3-Pin SOT-23 BSS119NH6327XTSA1
- Infineon OptiMOS™ N-Channel MOSFET 100 V, 3-Pin SOT-23 BSS123NH6433XTMA1