Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-263 IRF9540NSTRLPBF

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Verpakkingsopties
RS-stocknr.:
827-3931
Fabrikantnummer:
IRF9540NSTRLPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

117mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

9.65 mm

Length

10.67mm

Height

4.83mm

Distrelec Product Id

304-44-456

Automotive Standard

No

P-Channel Power MOSFET 100V to 150V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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