Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 IRF5210STRLPBF

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RS-stocknr.:
831-2825
Fabrikantnummer:
IRF5210STRLPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

170W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

150nC

Forward Voltage Vf

-1.6V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

9.65 mm

Height

4.83mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

Distrelec Product Id

304-44-445

P-Channel Power MOSFET 100V to 150V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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