Infineon HEXFET Type P-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-252 IRFR5505TRPBF

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Verpakkingsopties
RS-stocknr.:
827-4072
Fabrikantnummer:
IRFR5505TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.39mm

Length

6.73mm

Width

6.22 mm

Automotive Standard

No

Distrelec Product Id

304-44-466

P-Channel Power MOSFET 40V to 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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