Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 IRFR9024NTRPBF

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Verpakkingsopties
RS-stocknr.:
827-4088
Fabrikantnummer:
IRFR9024NTRPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

175mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

38W

Forward Voltage Vf

-1.6V

Typical Gate Charge Qg @ Vgs

19nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

6.22 mm

Standards/Approvals

No

Length

6.73mm

Height

2.39mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF


This P-channel MOSFET, utilising HEXFET technology, delivers efficient performance across a range of electronic applications. Its robust attributes make it a Crucial component for users in automation, electronics, as well as the electrical and mechanical sectors. The product is adept at managing high current loads while ensuring effective control in power circuits.

Features & Benefits


• Maximum continuous drain current of 11A facilitates high-performance applications

• Can withstand drain-source voltage of up to 55V for increased reliability

• Low RDS(on) of 175 mΩ minimises power loss during operation

• Enhancement mode design optimises efficiency for various uses

• DPAK TO-252 surface mount package simplifies PCB integration and assembly

Applications


• Effective energy management in power supply circuits

• Suitable for motor control needing high current

• Utilised in DC-DC converters for improved efficiency

• Ideal for load switching due to Rapid response times

• Employed in industrial automation systems for added reliability

What is the maximum power dissipation of this component?


It has a maximum power dissipation capability of 38W.

How does the product handle gate voltages?


The gate can accommodate voltages ranging from -20 V to +20 V, allowing design flexibility.

What is the thermal performance of the device?


It operates safely at a maximum temperature of 150 °C, ensuring reliability in diverse environments.

Is it easy to mount on a PCB?


Yes, the DPAK TO-252 package enables straightforward surface mounting on printed circuit boards.

How does this MOSFET perform under varying temperatures?


It remains functional within a wide temperature range of -55 °C to +150 °C, catering to diverse application needs.

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