N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

RS-stocknr.:: 827-4919P
Fabrikantnummer:: CSD19536KCS
Fabrikant:: Texas Instruments

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

tijdelijk niet op voorraad – nieuwe voorraad verwacht op 22-05-2024, met een levertijd van 2 à 3 werkdagen.

Prijs Per stuk (geleverd in een tube)

€ 3,885

(excl. BTW)

€ 4,701

(incl. BTW)

Aantal stuks	Per stuk
26 +	€ 3,885

RS-stocknr.:: 827-4919P
Fabrikantnummer:: CSD19536KCS
Fabrikant:: Texas Instruments

ESD Control Selection Guide V1

RS-stocknr.:: 827-4919P
Fabrikantnummer:: CSD19536KCS
Fabrikant:: Texas Instruments

ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	259 A
Maximum Drain Source Voltage	100 V
Series	NexFET
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.2V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	118 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	4.7mm
Length	10.67mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	16.51mm

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	259 A
Maximum Drain Source Voltage	100 V
Series	NexFET
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.2V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	118 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	4.7mm
Length	10.67mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	16.51mm

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

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