Infineon OptiMOS Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TSDSON BSZ060NE2LSATMA1

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RS-stocknr.:
827-5296
Fabrikantnummer:
BSZ060NE2LSATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

25V

Package Type

TSDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

26W

Typical Gate Charge Qg @ Vgs

9.1nC

Forward Voltage Vf

0.87V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.4mm

Width

3.4 mm

Height

1.1mm

Standards/Approvals

No

Automotive Standard

No

N.v.t.

Infineon OptiMOS™ Power MOSFET Family


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green package (lead free)

Ultra low Rds(on)

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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