Infineon OptiMOS 5 Type N-Channel MOSFET, 176 A, 25 V Enhancement, 8-Pin TSDSON BSZ014NE2LS5IFATMA1
- RS-stocknr.:
- 214-8984
- Fabrikantnummer:
- BSZ014NE2LS5IFATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 10,31
(excl. BTW)
€ 12,48
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,031 | € 10,31 |
| 50 - 90 | € 0,979 | € 9,79 |
| 100 - 240 | € 0,938 | € 9,38 |
| 250 - 490 | € 0,896 | € 8,96 |
| 500 + | € 0,835 | € 8,35 |
*prijsindicatie
- RS-stocknr.:
- 214-8984
- Fabrikantnummer:
- BSZ014NE2LS5IFATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 176A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | TSDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 176A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type TSDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Automotive Standard No | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. With the OptiMOS-5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Monolithic integrated Schottky like diode
100% avalanche tested
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