Infineon OptiMOS 5 Type N-Channel MOSFET, 176 A, 25 V Enhancement, 8-Pin TSDSON BSZ014NE2LS5IFATMA1
- RS-stocknr.:
- 214-8984
- Fabrikantnummer:
- BSZ014NE2LS5IFATMA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 10 eenheden)*
€ 5,92
(excl. BTW)
€ 7,16
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 70 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,592 | € 5,92 |
*prijsindicatie
- RS-stocknr.:
- 214-8984
- Fabrikantnummer:
- BSZ014NE2LS5IFATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 176A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS 5 | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 0.6V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 176A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS 5 | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 0.6V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. With the OptiMOS-5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Monolithic integrated Schottky like diode
100% avalanche tested
Gerelateerde Links
- Infineon OptiMOS™ 5 N-Channel MOSFET 25 V, 8-Pin TSDSON-8 FL BSZ014NE2LS5IFATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin TSDSON-8 FL BSZ025N04LSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 8-Pin TSDSON-8 FL BSZ099N06LS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 30 V, 8-Pin TSDSON-8 FL BSZ0589NSATMA1
- Infineon OptiMOS™ Silicon N-Channel MOSFET 60 V, 8-Pin TSDSON-8 FL BSZ068N06NSATMA1
- Infineon OptiMOS™ Silicon N-Channel MOSFET 40 V, 8-Pin TSDSON-8 FL BSZ028N04LSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 25 V, 8-Pin TSDSON BSZ060NE2LSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 25 V, 8-Pin TSDSON BSC009NE2LSATMA1
