STMicroelectronics Single LdmoST Type N-Channel MOSFET, 5 A, 40 V Enhancement, 10-Pin PowerSO PD55015-E
- RS-stocknr.:
- 829-0627P
- Fabrikantnummer:
- PD55015-E
- Fabrikant:
- STMicroelectronics
Subtotaal 1 eenheid (geleverd in een buis)*
€ 16,60
(excl. BTW)
€ 20,09
(incl. BTW)
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- Plus verzending 950 stuk(s) vanaf 23 maart 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 16,60 |
*prijsindicatie
- RS-stocknr.:
- 829-0627P
- Fabrikantnummer:
- PD55015-E
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Operating Frequency | 1 GHz | |
| Maximum Continuous Drain Current Id | 5A | |
| Output Power | 15W | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | LdmoST | |
| Package Type | PowerSO | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 65°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 165°C | |
| Height | 3.6mm | |
| Width | 9.5 mm | |
| Length | 9.6mm | |
| Standards/Approvals | JEDEC Approved | |
| Typical Power Gain | 14dB | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Operating Frequency 1 GHz | ||
Maximum Continuous Drain Current Id 5A | ||
Output Power 15W | ||
Maximum Drain Source Voltage Vds 40V | ||
Series LdmoST | ||
Package Type PowerSO | ||
Mount Type Surface | ||
Pin Count 10 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 65°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 165°C | ||
Height 3.6mm | ||
Width 9.5 mm | ||
Length 9.6mm | ||
Standards/Approvals JEDEC Approved | ||
Typical Power Gain 14dB | ||
Automotive Standard No | ||
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.