N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 Infineon IRLL014NTRPBF

RS-stocknr.:: 830-3307
Fabrikantnummer:: IRLL014NTRPBF
Fabrikant:: Infineon

N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 Infineon IRLL014NTRPBF

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Prijs Elk (in een pakket van 25)**

€ 0,498

(excl. BTW)

€ 0,603

(incl. BTW)

50 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)*

75 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)

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GRATIS bezorging voor bestellingen vanaf € 75,00

Aantal stuks	Per stuk	Per verpakking**
25 - 100	€ 0,498	€ 12,45
125 - 225	€ 0,383	€ 9,575
250 - 600	€ 0,358	€ 8,95
625 - 1225	€ 0,333	€ 8,325
1250 +	€ 0,274	€ 6,85

**prijsindicatie

RS-stocknr.:: 830-3307
Fabrikantnummer:: IRLL014NTRPBF
Fabrikant:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 2.8A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL014NTRPBF

This MOSFET from Infineon, part of the HEXFET family, is engineered for high performance in various electrical and electronic applications. As an N-channel device operating in enhancement mode, it plays a vital role in power management for devices that demand high reliability in challenging conditions. Advanced technologies are integrated to manage substantial electrical loads effectively while keeping a compact design.

Features & Benefits

• Maximum continuous drain current of 2.8A for dependable performance
• Wide voltage range up to 55V for diverse applications
• Low drain-source on-resistance of 280mΩ minimises power losses
• High thermal stability with a maximum operating temperature of +150°C
• Enhanced gate threshold voltage options to improve switching capabilities
• Designed for surface mount applications, aiding PCB integration

Applications

• Utilised in automation systems for effective motor control
• Employed in power supply circuits for efficient voltage regulation
• Suitable for switching in electronic devices
• Integrated into battery management systems for optimised energy use
• Applicable in LED drivers to enhance control efficiency

What is the recommended mounting technique for optimal performance?

Utilising surface mount techniques ensures improved thermal performance and space efficiency on printed circuit boards.

How should the maximum gate-source voltage be considered when designing circuits?

It is important to maintain the gate-source voltage within the specified limits of -16V to +16V to ensure device integrity and performance.

Can this component handle high temperatures in operational environments?

It is rated for operation in environments up to +150°C, making it suitable for high-temperature applications.

Is it compatible with low-voltage battery systems?

Yes, it can manage low-voltage applications while providing effective power control and switching efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	2.8 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	280 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Typical Gate Charge @ Vgs	9.5 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	6.7mm
Transistor Material	Si
Width	3.7mm
Forward Diode Voltage	1V
Minimum Operating Temperature	-55 °C
Height	1.739mm