Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK IRLR120NTRPBF

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presentation
ROHM RD3T100CN N-Channel MOSFET, 10 A, 200 V, 3-Pin DPAK RD3T100CNTL1
RS-stocknr.
177-6805

Elk (in een pakket van 10)

€ 1,059

(excl. BTW)

€ 1,281

(incl. BTW)

RS-stocknr.:
830-3344
Fabrikantnummer:
IRLR120NTRPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

265 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Length

6.73mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

20 nC @ 5 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.39mm

Land van herkomst:
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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