Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252 IRLR3410TRPBF

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RS-stocknr.:
830-3379
Fabrikantnummer:
IRLR3410TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

155mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

79W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

6.22 mm

Length

6.73mm

Standards/Approvals

No

Height

2.39mm

Distrelec Product Id

304-44-480

Automotive Standard

AEC-Q101

Land van herkomst:
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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