Name: Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement, 3-Pin TO-263 IRF520NSTRLPBF
Brand: Infineon
SKU: 831-2821
Price: 0.96 EUR
Availability: Discontinued

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.7A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	200mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	48W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	4.83mm
	Width	9.65 mm
	Standards/Approvals	No
	Length	10.67mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.7A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 200mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 48W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 4.83mm
	Width 9.65 mm
	Standards/Approvals No
	Length 10.67mm
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NSTRLPBF

This MOSFET is designed for efficient switching and amplification across various applications. Its high power handling capacity offers versatility in the fields of automation and electronics. With advanced process technology, this device ensures performance and reliability, making it suitable for operational environments. The characteristics of this MOSFET enhance circuit performance significantly.

Features & Benefits

• Low on-resistance contributes to improved energy efficiency

• High drain current rating of 9.7A supports robust performance

• Maximum drain-source voltage of 100V provides application flexibility

• Enhancement mode enables effective switching capabilities

• Surface mount design allows for compact PCB layouts

Applications

• Employed in power management systems for energy conversion

• Suitable for automation controls requiring rapid switching

• Applied in motor control circuits for precision

• Utilised in renewable energy systems such as solar inverters

• Used in audio amplifiers to enhance sound quality

What type of mounting is suitable for this device?

This component features a surface mount design, making it compatible with automated PCB assembly processes and ideal for high-density layouts.

Can it manage high temperatures during operation?

Yes, it has a maximum operating temperature of +175°C, making it apt for harsh environments without compromising performance.

Is this suitable for applications requiring fast switching?

Yes, its rapid switching speed enhances performance in applications like PWM and DC-DC converters.

What is the inductance characteristic of this device?

The internal drain inductance is typically 4.5nH, contributing to its responsive operation.

How is power dissipation handled in this MOSFET?

It allows for a maximum power dissipation of 48W, ensuring thermal stability and effective performance in various circuits.

Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement, 3-Pin TO-263 IRF520NSTRLPBF