Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement, 3-Pin TO-220 IRF520NPBF
- RS-stocknr.:
- 541-1180
- Artikelnummer Distrelec:
- 303-41-279
- Fabrikantnummer:
- IRF520NPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 0,62
(excl. BTW)
€ 0,75
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 24 | € 0,62 |
| 25 - 49 | € 0,55 |
| 50 - 99 | € 0,52 |
| 100 - 249 | € 0,47 |
| 250 + | € 0,42 |
*prijsindicatie
- RS-stocknr.:
- 541-1180
- Artikelnummer Distrelec:
- 303-41-279
- Fabrikantnummer:
- IRF520NPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 48W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69 mm | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30341279 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 48W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.69 mm | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Automotive Standard No | ||
Distrelec Product Id 30341279 | ||
Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NPBF
This MOSFET utilises advanced HEXFET technology to provide high performance for various applications. With a continuous drain current capability of 9.7A and a maximum drain-source voltage of 100V, it is a suitable component for electronic circuits. Its enhancement mode design ensures efficient operation in diverse environments, making it a practical choice for professionals in the automation and electronics fields.
Features & Benefits
• High current capacity of 9.7A enhances performance
• Robust design ensures functionality in extreme conditions
• Low on-resistance of 200mΩ minimises power loss
• Fast switching capabilities improve efficiency
• Compatible with TO-220AB package for straightforward installation
Applications
• Power management in automation systems
• Switching in electrical circuits
• Motor drive circuits for improved efficiency
• High-frequency in electronics
How does the low on-resistance impact performance?
The low on-resistance reduces heat generation and enhances efficiency, resulting in improved overall performance in power applications by minimising energy losses.
What is the significance of the temperature range?
The wide operational temperature range ensures consistent performance in various environments, effectively accommodating both high and low temperature applications.
Can this component handle short pulses of higher current?
Yes, it can manage pulsed drain currents up to 38A, making it suitable for transient conditions in electronic circuits.
What considerations should I have when installing?
Ensure appropriate heatsinking as specified in the datasheet to manage heat dissipation effectively during operation, particularly under high load conditions.
How does the device perform under rapid switching conditions?
Its fast switching speed supports efficient operation in applications requiring quick response times, making it a versatile choice for modern electronic designs.
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