Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin I2PAK IPI80N04S403AKSA1

RS-stocknr.:: 857-6754
Fabrikantnummer:: IPI80N04S403AKSA1
Fabrikant:: Infineon

Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin I2PAK IPI80N04S403AKSA1

Bulkkorting beschikbaar

Subtotaal (1 tube van 500 eenheden)*

€ 367,50

(excl. BTW)

€ 444,50

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk

Aantal stuks	Per stuk	Per tube*
500 - 2000	€ 0,735	€ 367,50
2500 - 4500	€ 0,717	€ 358,50
5000 +	€ 0,699	€ 349,50

*prijsindicatie

RS-stocknr.:: 857-6754
Fabrikantnummer:: IPI80N04S403AKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	40 V
	Series	OptiMOS T2
	Package Type	I2PAK (TO-262)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	3.7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	94 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	51 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Width	4.4mm
	Transistor Material	Si
	Height	9.25mm
	Minimum Operating Temperature	-55 °C

	Alles selecteren
	Merk Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 40 V
	Series OptiMOS T2
	Package Type I2PAK (TO-262)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 3.7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 94 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 51 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Width 4.4mm
	Transistor Material Si
	Height 9.25mm
	Minimum Operating Temperature -55 °C

N.v.t.

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin I2PAK IPI80N04S403AKSA1

Infineon OptiMOS™ T2 Power MOSFETs

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