Infineon CoolMOS CFD N-Channel MOSFET, 8.7 A, 700 V, 3-Pin TO-247 IPW65R420CFDFKSA1
- RS-stocknr.:
- 857-7148
- Fabrikantnummer:
- IPW65R420CFDFKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 240 eenheden)*
€ 372,00
(excl. BTW)
€ 451,20
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 240 - 240 | € 1,55 | € 372,00 |
| 480 - 960 | € 1,472 | € 353,28 |
| 1200 + | € 1,40 | € 336,00 |
*prijsindicatie
- RS-stocknr.:
- 857-7148
- Fabrikantnummer:
- IPW65R420CFDFKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.7 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | TO-247 | |
| Series | CoolMOS CFD | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 420 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 83.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5.21mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 31.5 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.7 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type TO-247 | ||
Series CoolMOS CFD | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 420 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 83.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.21mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 31.5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 16.13mm | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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