MagnaChip N-Channel MOSFET, 5.7 A, 600 V, 3-Pin TO-220F MMF60R750PTH
- RS-stocknr.:
- 871-5040
- Fabrikantnummer:
- MMF60R750PTH
- Fabrikant:
- MagnaChip
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 871-5040
- Fabrikantnummer:
- MMF60R750PTH
- Fabrikant:
- MagnaChip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | MagnaChip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.7 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 750 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 27.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.71mm | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.93mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.4V | |
| Height | 16.13mm | |
| Alles selecteren | ||
|---|---|---|
Merk MagnaChip | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.7 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 750 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 27.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Length 10.71mm | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4.93mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||
Height 16.13mm | ||
- Land van herkomst:
- CN
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
Low EMI
Low power loss through high speed switching and low on-resistance
Low power loss through high speed switching and low on-resistance
MOSFET Transistors, MagnaChip
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