STMicroelectronics STripFET Type P-Channel MOSFET, 3 A, 60 V Enhancement, 4-Pin SOT-223
- RS-stocknr.:
- 877-2949P
- Fabrikantnummer:
- STN3P6F6
- Fabrikant:
- STMicroelectronics
Ontvang bulkkorting
Voeg 500 meer toe om 13% te besparen
Bekijk bulkkortingSubtotaal 100 eenheden (geleverd op een doorlopende strip)*
€ 41,10
(excl. BTW)
€ 49,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 20 stuk(s) vanaf 09 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Bespaar |
|---|---|---|
| 100 - 490 | € 0,411 | - |
| 500 - 990 | € 0,354 | 13% |
| 1000 - 1990 | € 0,349 | 15% |
| 2000 + | € 0,345 | 16% |
*prijsindicatie
- RS-stocknr.:
- 877-2949P
- Fabrikantnummer:
- STN3P6F6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.6W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Width | 3.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.6W | ||
Maximum Operating Temperature 175°C | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Width 3.7mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.