Infineon Single OptiMOS™ 3 1 Type N-Channel MOSFET, 70 A, 80 V Enhancement, 3-Pin TO-220 IPP100N08N3GXKSA1

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RS-stocknr.:
892-2292
Fabrikantnummer:
IPP100N08N3GXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS™ 3

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

18.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20/20 V

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Length

10.36mm

Height

15.95mm

Width

4.57 mm

Number of Elements per Chip

1

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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