Toshiba TK Type N-Channel MOSFET, 58 A, 60 V Enhancement, 3-Pin TO-220 TK58A06N1,S4X(S
- RS-stocknr.:
- 896-2401
- Fabrikantnummer:
- TK58A06N1,S4X(S
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,68
(excl. BTW)
€ 5,665
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,936 | € 4,68 |
| 50 - 95 | € 0,77 | € 3,85 |
| 100 - 245 | € 0,70 | € 3,50 |
| 250 - 495 | € 0,686 | € 3,43 |
| 500 + | € 0,674 | € 3,37 |
*prijsindicatie
- RS-stocknr.:
- 896-2401
- Fabrikantnummer:
- TK58A06N1,S4X(S
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Operating Temperature | 150°C | |
| Height | 15mm | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Width | 4.5 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Operating Temperature 150°C | ||
Height 15mm | ||
Standards/Approvals No | ||
Length 10mm | ||
Width 4.5 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
MOSFET Transistors, Toshiba
Gerelateerde Links
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 100 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 800 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
