Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 120 V Enhancement, 3-Pin TO-220 IPP041N12N3GXKSA1
- RS-stocknr.:
- 897-7311
- Artikelnummer Distrelec:
- 304-37-847
- Fabrikantnummer:
- IPP041N12N3GXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,99
(excl. BTW)
€ 9,668
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,995 | € 7,99 |
| 20 - 98 | € 3,325 | € 6,65 |
| 100 - 198 | € 2,88 | € 5,76 |
| 200 - 498 | € 2,74 | € 5,48 |
| 500 + | € 2,455 | € 4,91 |
*prijsindicatie
- RS-stocknr.:
- 897-7311
- Artikelnummer Distrelec:
- 304-37-847
- Fabrikantnummer:
- IPP041N12N3GXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Height | 15.95mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Height 15.95mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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