Infineon OptiMOS Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 214-4403
- Fabrikantnummer:
- IPP023N08N5AKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 97,80
(excl. BTW)
€ 118,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 400 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,956 | € 97,80 |
| 100 - 200 | € 1,858 | € 92,90 |
| 250 + | € 1,76 | € 88,00 |
*prijsindicatie
- RS-stocknr.:
- 214-4403
- Fabrikantnummer:
- IPP023N08N5AKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | OptiMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 133nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series OptiMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 133nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Length 10.2mm | ||
Automotive Standard No | ||
This Infineon OptiMOS 5 MOSFET is ideal for high frequency switching and synchronous rectification. It requires less paralleling.
It has reduced switching and conduction losses
It has low voltage overshoot
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