Infineon CoolMOS C6 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 3-Pin TO-220 IPP60R099C6XKSA1
- RS-stocknr.:
- 898-6895
- Fabrikantnummer:
- IPP60R099C6XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 8,70
(excl. BTW)
€ 10,52
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 390 stuk(s) vanaf 11 mei 2026
- Plus verzending 254 stuk(s) vanaf 18 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 4,35 | € 8,70 |
| 10 - 18 | € 3,87 | € 7,74 |
| 20 - 48 | € 3,61 | € 7,22 |
| 50 - 98 | € 3,395 | € 6,79 |
| 100 + | € 3,13 | € 6,26 |
*prijsindicatie
- RS-stocknr.:
- 898-6895
- Fabrikantnummer:
- IPP60R099C6XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS C6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 119nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 16.15mm | |
| Length | 10.65mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS C6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 119nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 16.15mm | ||
Length 10.65mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R041C6FKSA1