N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13306WT
- RS-stocknr.:
- 900-9927P
- Fabrikantnummer:
- CSD13306WT
- Fabrikant:
- Texas Instruments
Bulkkorting beschikbaar
Subtotaal 20 eenheden (geleverd op een doorlopende strip)*
€ 7,30
(excl. BTW)
€ 8,84
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk |
|---|---|
| 20 - 40 | € 0,365 |
| 50 - 90 | € 0,321 |
| 100 - 240 | € 0,306 |
| 250 + | € 0,274 |
*prijsindicatie
- RS-stocknr.:
- 900-9927P
- Fabrikantnummer:
- CSD13306WT
- Fabrikant:
- Texas Instruments
Specificaties
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | DSBGA | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 15.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 1.9 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Number of Elements per Chip | 1 | |
| Length | 1mm | |
| Width | 1.49mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 8.6 nC @ 0 V | |
| Height | 0.28mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | NexFET | |
| Forward Diode Voltage | 1V | |
| Alles selecteren | ||
|---|---|---|
Merk Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type DSBGA | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 15.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 1.9 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Number of Elements per Chip 1 | ||
Length 1mm | ||
Width 1.49mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 8.6 nC @ 0 V | ||
Height 0.28mm | ||
Minimum Operating Temperature -55 °C | ||
Series NexFET | ||
Forward Diode Voltage 1V | ||
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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