onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 3 A, 20 V Enhancement, 6-Pin SSOT FDC6420C
- RS-stocknr.:
- 903-4147
- Fabrikantnummer:
- FDC6420C
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 14,10
(excl. BTW)
€ 17,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 725 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 3.000 stuk(s) vanaf 20 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 75 | € 0,564 | € 14,10 |
| 100 - 475 | € 0,421 | € 10,53 |
| 500 - 975 | € 0,336 | € 8,40 |
| 1000 - 2975 | € 0,278 | € 6,95 |
| 3000 + | € 0,226 | € 5,65 |
*prijsindicatie
- RS-stocknr.:
- 903-4147
- Fabrikantnummer:
- FDC6420C
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SSOT | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 960mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SSOT | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 960mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi Isolated PowerTrench 2 Type P 3 A 6-Pin SSOT
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 6-Pin SSOT
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 6-Pin SSOT
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 6-Pin SSOT FDC655BN
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 6-Pin SSOT FDC645N
- onsemi Isolated PowerTrench 2 Type N Type P 6.2 A 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC