onsemi PowerTrench Type P-Channel MOSFET, 8.8 A, 30 V Enhancement, 8-Pin SOIC SI4435DY

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€ 8,58

(excl. BTW)

€ 10,38

(incl. BTW)

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Verpakkingsopties
RS-stocknr.:
903-4412
Fabrikantnummer:
SI4435DY
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.8A

Maximum Drain Source Voltage Vds

30V

Series

PowerTrench

Package Type

SOIC

Mount Type

Solder

Pin Count

8

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

17nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

4.9mm

Height

1.57mm

Width

3.9 mm

Automotive Standard

No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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