Infineon OptiMOS 5 N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON BSC028N06NSATMA1

RS-stocknr.:: 906-4296
Fabrikantnummer:: BSC028N06NSATMA1
Fabrikant:: Infineon

Infineon OptiMOS 5 N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON BSC028N06NSATMA1

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€ 19,56

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€ 23,67

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50 - 90	€ 1,86	€ 18,60
100 - 240	€ 1,78	€ 17,80
250 - 490	€ 1,702	€ 17,02
500 +	€ 1,584	€ 15,84

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RS-stocknr.:: 906-4296
Fabrikantnummer:: BSC028N06NSATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS 5
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Power Dissipation Pd	83W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	6.1mm
	Standards/Approvals	Pb Free, Halogen Free (IEC61249-2-21), JEDEC (J-STD20,JESD22), RoHS
	Width	5.35mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS 5
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Power Dissipation Pd 83W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 6.1mm
	Standards/Approvals Pb Free, Halogen Free (IEC61249-2-21), JEDEC (J-STD20,JESD22), RoHS
	Width 5.35mm
	Automotive Standard No

Vrijgesteld

Infineon OptiMOS™ 5 Series MOSFET, 137A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - BSC028N06NSATMA1

This high-power MOSFET is suitable for applications where efficiency and reliability are essential. With a maximum continuous drain current of 137A and a breakdown voltage of 60V, it is well-suited for power management systems, making it an excellent choice for professionals in automation and electronics. Its enhanced gate threshold voltage range promotes precise switching performance, ensuring effective operation in various environments.

Features & Benefits

• Supports high-power applications with a maximum power dissipation of 100W

• Low RDS(on) of 4.2mΩ for improved efficiency

• N-channel configuration for enhanced performance

• TDSON package for effective thermal management

• Minimum operating temperature of -55°C, ideal for extreme conditions

• Avalanche rated for durability under transient conditions

Applications

• Utilised in synchronous rectification circuits for power supplies

• Suitable for electric vehicles and industrial automation

• Applied in switch-mode power supplies for effective energy conversion

• Used in UPS systems for dependable power backup solutions

• Appropriate for DC-DC converters and inverters in renewable energy systems

What is the suitable temperature range for operation?

It operates effectively within a temperature range of -55°C to +150°C, accommodating diverse environmental conditions.

How does this component handle thermal management?

The device's TDSON package optimises thermal resistance, ensuring efficient heat dissipation during operation.

What gate voltage is required for optimal performance?

The maximum gate-source voltage is ±20V, while the gate threshold voltage ranges from 2.1V to 3.3V, facilitating effective drive conditions.

Can it be used in high-frequency switching applications?

Yes, it is designed with dynamic characteristics that support high-frequency switching, making it suitable for modern electronic designs.

What safeguards are in place against electrical overstress?

It is validated for industrial applications and fully avalanche tested, providing assurance against transient surges in electrical demand.