Infineon OptiMOS N-Channel MOSFET, 46 A, 60 V Enhancement, 8-Pin TDSON BSC097N06NSATMA1

RS-stocknr.:: 110-9115
Fabrikantnummer:: BSC097N06NSATMA1
Fabrikant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 46 A, 60 V Enhancement, 8-Pin TDSON BSC097N06NSATMA1

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€ 6,00

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€ 7,25

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Aantal stuks	Per stuk	Per verpakking*
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*prijsindicatie

RS-stocknr.:: 110-9115
Fabrikantnummer:: BSC097N06NSATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	46A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	14.6mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Power Dissipation Pd	36W
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	5.35mm
	Standards/Approvals	No
	Width	6.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 46A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 14.6mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Power Dissipation Pd 36W
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 5.35mm
	Standards/Approvals No
	Width 6.1mm
	Automotive Standard No

N.v.t.

Infineon OptiMOS Series MOSFET, 60V Drain Source Voltage, 46A Continuous Drain Current - BSC097N06NSATMA1

This MOSFET is a power transistor designed for switching and amplification in high-current, low-voltage circuits. It operates across an extended temperature span and is supplied in a compact surface-mount package suitable for dense board layouts. The device is intended for demanding electronic assemblies where efficient conduction and gate control are required.

Features and Benefits:

• Maximum drain-source voltage 60V enables robust low-voltage switching
• Continuous drain current 46A supports high-current load handling
• Low RDS(on) 14.6 mΩ reduces conduction losses in power paths
• Maximum power dissipation 36W allows sustained thermal loading
• Typical gate charge 12 nC provides swift gate transitions
• Gate-source tolerance 20V permits flexible drive voltages

Applications

• Suitable for synchronous buck regulator stages
• Ideal for motor-drive half-bridge circuits
• Used with DC-DC converters in server power supplies
• Can be used for battery management and power distribution
• Appropriate for high-current point-of-load switching

What thermal environment can it withstand during operation?

It is rated to operate between -55 °C and 150 °C, permitting use across industrial and elevated-temperature applications.

What package and mounting method are provided for PCB assembly?

The component is supplied in a TDSON package and is designed for surface mounting to facilitate automated assembly.

What channel type and mode are implemented for switching behaviour?

The device uses an N-channel enhancement-mode topology suitable for low-side and high-side switching when appropriately driven.

How many electrical connections does the device present to a circuit?

It features an 8‑pin configuration to accommodate gate, drain and source connections and thermal conduction paths.